The kinetic of the oxidation of InSn48
Identifieur interne : 000080 ( Main/Exploration ); précédent : 000079; suivant : 000081The kinetic of the oxidation of InSn48
Auteurs : RBID : ISTEX:216_1995_Article_BF00322077.pdfAbstract
The oxidation of InSn48 has been investigated at partial pressures between 10−8 Pa and 10+4 Pa over a temperature range from 22 °C to 250 °C with different analytical methods. The oxide film contains a mixture of several oxides, although indium oxide forms preferentially. Below the melting point a logarithmic growth, and above this, a parabolic growth of the oxide film has been observed. The oxide film formed in air at 250 °C does not become thicker than 50 nm in the first 5 min of oxidation.
DOI: 10.1007/BF00322077
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Adolphi</name><affiliation wicri:level="1"><mods:affiliation>Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden</wicri:regionArea><wicri:noRegion>01062, Dresden</wicri:noRegion><wicri:noRegion>Dresden</wicri:noRegion></affiliation></author><author><name>T. Wegener</name><affiliation wicri:level="1"><mods:affiliation>Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden</wicri:regionArea><wicri:noRegion>01062, Dresden</wicri:noRegion><wicri:noRegion>Dresden</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:216_1995_Article_BF00322077.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF00322077</idno><idno type="wicri:Area/Main/Corpus">000018</idno><idno type="wicri:Area/Main/Curation">000018</idno><idno type="wicri:Area/Main/Exploration">000080</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The oxidation of InSn48 has been investigated at partial pressures between 10−8 Pa and 10+4 Pa over a temperature range from 22 °C to 250 °C with different analytical methods. The oxide film contains a mixture of several oxides, although indium oxide forms preferentially. Below the melting point a logarithmic growth, and above this, a parabolic growth of the oxide film has been observed. The oxide film formed in air at 250 °C does not become thicker than 50 nm in the first 5 min of oxidation.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="03c904967a96042d06e8b479bace53e3af4457ab"><titleInfo lang="eng"><title>The kinetic of the oxidation of InSn48</title></titleInfo><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Preuß</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden, Germany</affiliation></name><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Adolphi</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden, Germany</affiliation></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Wegener</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062, Dresden, Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Lectures</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1995-01-16</dateCreated><dateCaptured encoding="w3cdtf">1995-01-27</dateCaptured><dateValid encoding="w3cdtf">2004-08-27</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The oxidation of InSn48 has been investigated at partial pressures between 10−8 Pa and 10+4 Pa over a temperature range from 22 °C to 250 °C with different analytical methods. The oxide film contains a mixture of several oxides, although indium oxide forms preferentially. Below the melting point a logarithmic growth, and above this, a parabolic growth of the oxide film has been observed. The oxide film formed in air at 250 °C does not become thicker than 50 nm in the first 5 min of oxidation.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Fresenius J Anal Chem</title></titleInfo><titleInfo><title>Fresenius' Journal of Analytical Chemistry</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 353</partNumber><partNumber>Number: 3-4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-01-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Analytical Chemistry</topic><topic>Food Science</topic><topic>Inorganic Chemistry</topic><topic>Physical Chemistry</topic><topic>Monitoring/Environmental Analysis/Environmental Ecotoxicology</topic></subject><identifier type="issn">0937-0633</identifier><identifier type="issn">Electronic: 1432-1130</identifier><identifier type="matrixNumber">216</identifier><identifier type="local">IssueArticleCount: 53</identifier><recordInfo><recordOrigin>Springer-Verlag, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00322077</identifier><identifier type="matrixNumber">Art37</identifier><identifier type="local">BF00322077</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>399</start><end>402</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1995</recordOrigin><recordIdentifier>216_1995_Article_BF00322077.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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